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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB863 DESCRIPTION With TO-3P(I) package Complement to type 2SD1148 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -140 -140 -5 -10 -1 UNIT V V V A A W ae ae TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-5.0A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V IC=0;f=1MHz ; VCB=-10V 55 25 15 MIN -140 -0.60 -0.96 TYP. 2SB863 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V -2.0 -1.5 -5.0 -5.0 160 |I |I V V A A Collector output capacitance O 80-160 MHz pF hFE-1 Classifications R 55-110 HAN INC SEM GE OND IC TOR UC 400 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB863 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB863 SEM GE HAN INC OND IC TOR UC 4 |
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